Two-Dimensional Modeling of Quantum Mechanical Effects in Ultra-Short CMOS Devices
نویسندگان
چکیده
– Quantum mechanical analysis of the quantum confinement of ultrashort CMOS is numerically very expensive. In this paper we present a macroscopic model, which includes a new approach to match the vertical carrier profile and combines it with a classical model in lateral direction. The simulation results show a significant improvement concerning the accuracy of the carrier profile and the C/V characteristics. Key-Words: quantum confinement, two-dimensional device modeling, ultrashort CMOS
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